Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

TitleEvidence of noncascade intracenter electron relaxation in shallow donor centers in silicon
Publication TypeJournal Article
Year of Publication2008
AuthorsS.G Pavlov, H.W Hubers, P.M Haas, J.N Hovenier, T.O Klaassen, R.K Zhukavin, V.N Shastin, D.A Carder, B. Redlich
JournalPhysical Review B
Volume78
Number16
Pagination7
Date PublishedOct
Type of ArticleArticle
ISBN Number1098-0121
Accession NumberISI:000260574500052
KeywordsCASCADE CAPTURE, GERMANIUM, GROUP-V DONORS, LOW-TEMPERATURES, RECOMBINATION, SI, SPECTRA, STATE, STIMULATED TERAHERTZ EMISSION, TRANSITIONS
Abstract

Noncascade relaxation of photoexcited electrons on ionized donor centers has been observed in silicon doped by arsenic (Si:As) at low temperatures. Emission spectra of the Si:As terahertz intracenter laser give evidence of specific channels for the electron relaxation through low-lying donor states. The dominating relaxation channels strongly depend on the initial energy distribution of the nonequilibrium carriers. A relaxation step may exceed not only the energy gap to an adjacent lower-lying donor level but also the characteristic energy step as set by the energy and momentum conservation requirements for intravalley acoustic phonons.

URL<Go to ISI>://000260574500052
Division

GUTHz

Department

FELIX

PID

6a235ad7f43be971bf0f0eb2bb22d0f7

Alternate TitlePhys. Rev. B

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