Terahertz Raman laser based on silicon doped with phosphorus

TitleTerahertz Raman laser based on silicon doped with phosphorus
Publication TypeJournal Article
Year of Publication2008
AuthorsS.G Pavlov, H.W Hubers, U. Bottger, R.K Zhukavin, V.N Shastin, J.N Hovenier, B. Redlich, N.V Abrosimov, H. Riemann
JournalApplied Physics Letters
Volume92
Number9
Pagination3
Date PublishedMar
Type of ArticleArticle
ISBN Number0003-6951
Accession NumberISI:000253761500011
KeywordsDONORS, QUANTUM CASCADE STRUCTURES, SI, STIMULATED-EMISSION
Abstract

Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are close to the frequencies of the intracenter laser lines which originate from the 2p(0) and 2p(+/-) phosphorus states. The Stokes shift of 3.16 THz is equal to the difference between the energies of the phosphorus ground state, 1s(A(1)), and the 1s(E) excited state. (C) 2008 American Institute of Physics.

URL<Go to ISI>://000253761500011
Division

GUTHz

Department

FELIX

PID

5b51d2f7f7f12f33422b86a54f1baaf9

Alternate TitleAppl. Phys. Lett.

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