Terahertz lasing from silicon by infrared Raman scattering on bismuth centers

TitleTerahertz lasing from silicon by infrared Raman scattering on bismuth centers
Publication TypeJournal Article
Year of Publication2009
AuthorsS.G Pavlov, U. Bottger, R. Eichholz, N.V Abrosimov, H. Riemann, V.N Shastin, B. Redlich, H.W Hubers
JournalApplied Physics Letters
Volume95
Number20
Pagination3
Date PublishedNov
Type of ArticleArticle
ISBN Number0003-6951
Accession NumberISI:000272052200010
Keywordsbismuth, doping, EMISSION, excited states, ground states, GROUP-V DONORS, LASER, Raman spectra, SCATTERING, semiconductor lasers, silicon, STATE, stimulated emission, stimulated Raman, terahertz wave spectra
Abstract

Stimulated emission at terahertz frequencies (4.5-5.8 THz) has been realized by electronic Raman scattering of infrared radiation on bismuth donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 40.53 meV which corresponds to the bismuth intracenter transition between the 1s(A(1)) ground state and the excited 1s(E) state. The laser has a low optical threshold and the largest frequency coverage in comparison with other Raman silicon lasers based on shallow donor centers. Time-resolved pump spectra enable the separation of donor and Raman lasing.

URL<Go to ISI>://000272052200010
Division

GUTHz

Department

FELIX

PID

7c8de2a66cdcc3f31c7a4ac68e52038c

Alternate TitleAppl. Phys. Lett.

Go back one page.