Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy

TitleContinuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy
Publication TypeJournal Article
Year of Publication2009
AuthorsP. Rauter, T. Fromherz, N.Q Vinh, B.N Murdin, G. Mussler, D. Grutzmacher, G. Bauer
JournalPhysical Review Letters
Volume102
Number14
Pagination4
Date PublishedApr
Type of ArticleArticle
ISBN Number0031-9007
Accession NumberISI:000265082500066
KeywordsCASCADE STRUCTURES, ELECTROLUMINESCENCE, EMITTERS, ENERGY, LASER, TRANSITION
Abstract

We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as the wave functions and their overlaps were tuned. The range of magnitudes for the lifetime indicates a possible route to silicon-based quantum cascade lasers.

URL<Go to ISI>://000265082500066
Division

GUTHz

Department

FELIX

PID

b94e6d38851887abb7264a2232c3bb80

Alternate TitlePhys. Rev. Lett.

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