|Title||Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy|
|Publication Type||Journal Article|
|Year of Publication||2009|
|Authors||P. Rauter, T. Fromherz, N.Q Vinh, B.N Murdin, G. Mussler, D. Grutzmacher, G. Bauer|
|Journal||Physical Review Letters|
|Type of Article||Article|
|Keywords||CASCADE STRUCTURES, ELECTROLUMINESCENCE, EMITTERS, ENERGY, LASER, TRANSITION|
We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as the wave functions and their overlaps were tuned. The range of magnitudes for the lifetime indicates a possible route to silicon-based quantum cascade lasers.
|URL||<Go to ISI>://000265082500066|
|Alternate Title||Phys. Rev. Lett.|
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