Stimulated terahertz emission due to electronic Raman scattering in silicon

TitleStimulated terahertz emission due to electronic Raman scattering in silicon
Publication TypeJournal Article
Year of Publication2009
AuthorsS.G Pavlov, U. Bottger, J.N Hovenier, N.V Abrosimov, H. Riemann, R.K Zhukavin, V.N Shastin, B. Redlich, A.FG van der Meer, H.W Hubers
JournalApplied Physics Letters
Volume94
Number17
Pagination3
Date PublishedApr
Type of ArticleArticle
ISBN Number0003-6951
Accession NumberISI:000265738700012
KeywordsDONORS, ELECTROLUMINESCENCE, elemental semiconductors, GAP, impurity states, LASER, LASERS, optical pumping, Raman, semiconductor lasers, silicon, submillimetre wave lasers
Abstract

Stimulated Raman emission in the terahertz frequency range (4.8-5.1 THz and 5.9-6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A(1)) and the excited 1s(E) arsenic states. Optical thresholds of the Raman laser are similar to those observed for other silicon donor lasers. In addition, intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A(1))-> 2s transition.

URL<Go to ISI>://000265738700012
Division

GUTHz

Department

FELIX

PID

2d6c2b3eaa01db54c45d21aa15137ed2

Alternate TitleAppl. Phys. Lett.

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