| Title | Film growth by polyatomic C2H5+ bombarding a diamond (100) surfaces: Molecular dynamics study |
| Publication Type | Conference Proceedings |
| Year of Publication | 2009 |
| Authors | X.D Lu, Y. Qin, J. Ning, T. Zhou, C.Y Deng, C. Meng, Q. Qian, F. Gou, Z. Chuanwu, Y. Ying, J. Ming |
| Pagination | 3238-3241 |
| Publisher | Elsevier Science Bv |
| Accession Number | ISI:000271349500068 |
| Keywords | implantation and deposition, Molecular dynamics methods, Plasma-based ion, surface etching |
| Abstract | The deposition of polyatomic C2H5+ ions is studied using classical molecular dynamics simulations with a new improved Brenner potentials developed by Brenner. The simulation results show that when the incident energy is less than 65 eV, the deposition coefficient of H is larger than that of C atoms. When the incident energy is larger than 65 eV, the deposition of H is less than that of C atoms. With increasing incident energy, a transition from Csp3-rich to Csp2-rich in the grown films is found. (C) 2009 Elsevier B.V. All rights reserved. |
| URL | <Go to ISI>://000271349500068 |
| Division | nSI |
| PID | 0b9ed325b07c36b0db338306e5f1fac6 |
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