Film growth by polyatomic C2H5+ bombarding a diamond (100) surfaces: Molecular dynamics study

TitleFilm growth by polyatomic C2H5+ bombarding a diamond (100) surfaces: Molecular dynamics study
Publication TypeConference Proceedings
Year of Publication2009
AuthorsX.D Lu, Y. Qin, J. Ning, T. Zhou, C.Y Deng, C. Meng, Q. Qian, F. Gou, Z. Chuanwu, Y. Ying, J. Ming
Pagination3238-3241
PublisherElsevier Science Bv
Accession NumberISI:000271349500068
Keywordsimplantation and deposition, Molecular dynamics methods, Plasma-based ion, surface etching
Abstract

The deposition of polyatomic C2H5+ ions is studied using classical molecular dynamics simulations with a new improved Brenner potentials developed by Brenner. The simulation results show that when the incident energy is less than 65 eV, the deposition coefficient of H is larger than that of C atoms. When the incident energy is larger than 65 eV, the deposition of H is less than that of C atoms. With increasing incident energy, a transition from Csp3-rich to Csp2-rich in the grown films is found. (C) 2009 Elsevier B.V. All rights reserved.

URL<Go to ISI>://000271349500068
Division

nSI

PID

0b9ed325b07c36b0db338306e5f1fac6

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