Molecular dynamics simulations of CH+ ions interaction with silicon carbide

TitleMolecular dynamics simulations of CH+ ions interaction with silicon carbide
Publication TypeConference Proceedings
Year of Publication2009
AuthorsX. Lu, Y. Qin, J. Ning, T. Zhou, C.Y Deng, C. Meng, Q. Qian, Z. Chuanwu, Y. Ying, J. Ming, F. Gou
Pagination3242-3244
PublisherElsevier Science Bv
Accession NumberISI:000271349500069
KeywordsBOMBARDMENT, films, Molecular dynamics methods, Silicon carbide
Abstract

In this study, we have simulated the CH+ ions bombardment on a Si-terminated 3C-SiC (0 0 1) surface using molecular dynamic simulations with a Tersoff-Brenner potentials. The results show that the sputtering yields of Si atoms is more than that of C atoms. With increasing incident energy the uptake of H atoms increases, while the uptake of C atoms decreases. In amorphous layer, a carbon-rich region is observed. In the films, the CH group and SiH group are dominant. Their fractions increase with increasing incident energy, and then decrease. (C) 2009 Elsevier B.V. All rights reserved.

URL<Go to ISI>://000271349500069
Division

nSI

PID

d96f57772eb877847c2708ae14decfde

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