|Title||Molecular dynamics simulations of CH+ ions interaction with silicon carbide|
|Publication Type||Conference Proceedings|
|Year of Publication||2009|
|Authors||X. Lu, Y. Qin, J. Ning, T. Zhou, C.Y Deng, C. Meng, Q. Qian, Z. Chuanwu, Y. Ying, J. Ming, F. Gou|
|Publisher||Elsevier Science Bv|
|Keywords||BOMBARDMENT, films, Molecular dynamics methods, Silicon carbide|
In this study, we have simulated the CH+ ions bombardment on a Si-terminated 3C-SiC (0 0 1) surface using molecular dynamic simulations with a Tersoff-Brenner potentials. The results show that the sputtering yields of Si atoms is more than that of C atoms. With increasing incident energy the uptake of H atoms increases, while the uptake of C atoms decreases. In amorphous layer, a carbon-rich region is observed. In the films, the CH group and SiH group are dominant. Their fractions increase with increasing incident energy, and then decrease. (C) 2009 Elsevier B.V. All rights reserved.
|URL||<Go to ISI>://000271349500069|
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