Substrate temperature effect on F+ etching of SiC: Molecular dynamics simulation

TitleSubstrate temperature effect on F+ etching of SiC: Molecular dynamics simulation
Publication TypeConference Proceedings
Year of Publication2009
AuthorsX. Lu, J. Ning, Y. Qin, Q. Qian, Z. Chuanwu, Y. Ying, J. Ming, F. Gou
Pagination3235-3237
PublisherElsevier Science Bv
Accession NumberISI:000271349500067
Keywordsimplantation and deposition, Molecular dynamics methods, Plasma-based ion, Silicon carbide, surface etching
Abstract

In this study, we performed molecular dynamics simulations to investigate F+ continuously bombarding SiC surfaces at temperatures of 100, 400, 600 and 800 K with the energy of 150 eV. The simulation results show that the etch rate of Si atoms is more than that of C atoms. With increasing temperature, the deposition yield of F atoms decreases, while the etch yields of C and Si atoms increase. In etching products, SiF, SiF2 and CF species are dominant. Their yields increase with increasing temperature. (C) 2009 Elsevier B.V. All rights reserved.

URL<Go to ISI>://000271349500067
Division

nSI

PID

bed470ac4e0983ad002b9d68782ca630

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