| Title | Circular photogalvanic effect in HgTe/CdHgTe quantum well structures |
| Publication Type | Journal Article |
| Year of Publication | 2010 |
| Authors | B. Wittmann, S.N Danilov, V.V Bel'kov, S.A Tarasenko, E.G Novik, H. Buhmann, C. Brune, L.W Molenkamp, Z.D Kvon, N.N Mikhailov, S.A Dvoretsky, N.Q Vinh, A.FG van der Meer, B. Murdin, S.D Ganichev |
| Journal | Semiconductor Science and Technology |
| Volume | 25 |
| Number | 9 |
| Pagination | 7 |
| Date Published | Sep |
| Type of Article | Article |
| ISBN Number | 0268-1242 |
| Accession Number | ISI:000281221200006 |
| Keywords | MICROSTRUCTURES, PULSES, semiconductor, SPIN |
| Abstract | We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model. |
| URL | <Go to ISI>://000281221200006 |
| Division | GUTHz |
| Department | FELIX |
| PID | 4e79a7505b4b57c3632c87b955bc52b2 |
| Alternate Title | Semicond. Sci. Technol. |
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