Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

TitleCircular photogalvanic effect in HgTe/CdHgTe quantum well structures
Publication TypeJournal Article
Year of Publication2010
AuthorsB. Wittmann, S.N Danilov, V.V Bel'kov, S.A Tarasenko, E.G Novik, H. Buhmann, C. Brune, L.W Molenkamp, Z.D Kvon, N.N Mikhailov, S.A Dvoretsky, N.Q Vinh, A.FG van der Meer, B. Murdin, S.D Ganichev
JournalSemiconductor Science and Technology
Volume25
Number9
Pagination7
Date PublishedSep
Type of ArticleArticle
ISBN Number0268-1242
Accession NumberISI:000281221200006
KeywordsMICROSTRUCTURES, PULSES, semiconductor, SPIN
Abstract

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.

URL<Go to ISI>://000281221200006
Division

GUTHz

Department

FELIX

PID

4e79a7505b4b57c3632c87b955bc52b2

Alternate TitleSemicond. Sci. Technol.

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