Title | Circular photogalvanic effect in HgTe/CdHgTe quantum well structures |
Publication Type | Journal Article |
Year of Publication | 2010 |
Authors | B. Wittmann, S.N Danilov, V.V Bel'kov, S.A Tarasenko, E.G Novik, H. Buhmann, C. Brune, L.W Molenkamp, Z.D Kvon, N.N Mikhailov, S.A Dvoretsky, N.Q Vinh, A.FG van der Meer, B. Murdin, S.D Ganichev |
Journal | Semiconductor Science and Technology |
Volume | 25 |
Number | 9 |
Pagination | 7 |
Date Published | Sep |
Type of Article | Article |
ISBN Number | 0268-1242 |
Accession Number | ISI:000281221200006 |
Keywords | MICROSTRUCTURES, PULSES, semiconductor, SPIN |
Abstract | We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model. |
URL | <Go to ISI>://000281221200006 |
Division | GUTHz |
Department | FELIX |
PID | 4e79a7505b4b57c3632c87b955bc52b2 |
Alternate Title | Semicond. Sci. Technol. |
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