Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure

TitleSingle shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure
Publication TypeJournal Article
Year of Publication2010
AuthorsA.R Khorsand, R. Sobierajski, E. Louis, S. Bruijn, E.D van Hattum, R.WE van de Kruijs, M. Jurek, D. Klinger, J.B Pelka, L. Juha, T. Burian, J. Chalupsky, J. Cihelka, V. Hajkova, L. Vysin, U. Jastrow, N. Stojanovic, S. Toleikis, H. Wabnitz, K. Tiedtke, K. Sokolowski-Tinten, U. Shymanovich, J. Krzywinski, S. Hau-Riege, R. London, A. Gleeson, E.M Gullikson, F. Bijkerk
JournalOptics Express
Volume18
Number2
Pagination700-712
Date PublishedJan
Type of ArticleArticle
ISBN Number1094-4087
Accession NumberISI:000273860400032
KeywordsAMORPHOUS-SILICON, EXTREME-ULTRAVIOLET, films, free-electron laser, ION-BOMBARDMENT, MO-SI, MOLECULAR-SOLIDS, RAY, STABILITY, THERMAL-CONDUCTIVITY
Abstract

We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and "post-mortem" by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources. (C)2010 Optical Society of America

URL<Go to ISI>://000273860400032
Division

nSI

PID

4cdcfeb27e1b81724cb4c1e580a22246

Alternate TitleOpt. Express

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