Nanometer interface and materials control for multilayer EUV-optical applications

TitleNanometer interface and materials control for multilayer EUV-optical applications
Publication TypeJournal Article
Year of Publication2011
AuthorsE. Louis, A.E Yakshin, T. Tsarfati, F. Bijkerk
JournalProgress in Surface Science
Volume86
Issue11-12
Pagination255-294
Date PublishedNov-Dec
Type of ArticleReview
ISBN Number0079-6816
KeywordsCapping layer, CAPPING LAYERS, CARBON CONTAMINATION, Extreme UV, EXTREME-ULTRAVIOLET LITHOGRAPHY, ION-BOMBARDMENT, LITHOGRAPHY, MASK BLANKS, MO-SI MULTILAYERS, Mo/Si, MO/SI-MULTILAYERS, Multi layer, PULSED-LASER DEPOSITION, Review article, SOFT-X-RAY, THERMAL-STABILITY
Abstract

An overview is given of the progress in thin film and surface physics involved in multilayered systems with nanometer scale periodicity. When properly engineered, these enable the synthesis of reflective optics for the Extreme UV wavelength range. Design, deposition, and analysis of these structures have been driven by the demanding application of Extreme UV photolithography. This review addresses the selection of the wavelength in relation to the optical constants of materials, the layer growth mechanisms and ways to reduce layer roughness and interlayer formation. Special attention is given to the development of thin diffusion barrier layers between the materials in the multilayers to enhance the optical contrast and to reduce the interdiffusion. Practical issues like reduction of multilayer induced stress and enlargement of the reflectance bandwidth are also discussed, as well as the development of capping layers to control surface physics processes occurring under EUV irradiation. A description of the multilayer deposition techniques is given and the deposition of multilayers on large, heavily curved optics for real lithography systems is discussed. (C) 2011 Elsevier Ltd. All rights reserved.

DOI10.1016/j.progsurf.2011.08.001
Division

nSI

Department

AXO

PID235671b701a074f99b8e11947ace6ee9
Alternate TitleProg. Surf. Sci.

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