Controlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition

TitleControlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition
Publication TypeJournal Article
Year of Publication2011
AuthorsG. Dingemans, N.M Terlinden, M.A Verheijen, M.CM van de Sanden, W.MM Kessels
JournalJournal of Applied Physics
Volume110
Issue9
Pagination6
Date PublishedNov
Type of ArticleArticle
ISBN Number0021-8979
KeywordsAL2O3, DEFECTS, films, OXIDES, SILICON DIOXIDE, SOLAR-CELLS, SURFACE PASSIVATION, ZRO2
Abstract

Al(2)O(3) synthesized by atomic layer deposition (ALD) on H-terminated Si(100) exhibits a very thin (similar to 1 nm) interfacial SiO(x) layer. At this interface, a high fixed negative charge density, Q(f), is present after annealing which contributes to ultralow surface recombination velocities similar to 5 nm), the polarity of the effective charge density changed from negative to positive. The observed changes in Q(f) and the associated field-effect passivation had a significant influence on the injection-level-dependent minority carrier lifetime of Si. (C) 2011 American Institute of Physics.

DOI10.1063/1.3658246
Division

MaSF

Department

MaSF-E

PID

2ce9bc562e68caedb1f0d743291e86cb

Alternate TitleJ. Appl. Phys.

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