On the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon

TitleOn the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon
Publication TypeJournal Article
Year of Publication2011
AuthorsK. Sharma, A. Branca, A. Illiberi, F.D Tichelaar, M. Creatore, M.CM van de Sanden
JournalAdvanced Energy Materials
Volume1
Issue3
Pagination401-406
Date PublishedMay
Type of ArticleArticle
ISBN Number1614-6832
KeywordsCHEMICAL-VAPOR-DEPOSITION, EXPANDING THERMAL PLASMA, films, GLASS, GROWTH, H, NUCLEATION, RECRYSTALLIZATION, SIO2, TEMPERATURE-DEPENDENCE, THIN-FILMS
Abstract

In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiHx bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells.

DOI10.1002/aenm.201000074
Division

MaSF

Department

MaSF-E

PID

feec2f5af39adc2e2c74531c2cd088eb

Alternate TitleAdv. Energy Mater.

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