Atomic layer deposition of Ru from CpRu(CO)(2)Et using O-2 gas and O-2 plasma

TitleAtomic layer deposition of Ru from CpRu(CO)(2)Et using O-2 gas and O-2 plasma
Publication TypeJournal Article
Year of Publication2011
AuthorsN. Leick, R.OF Verkuijlen, L. Lamagna, E. Langereis, S. Rushworth, F. Roozeboom, M.CM van de Sanden, W.MM Kessels
JournalJournal of Vacuum Science & Technology A
Volume29
Issue2
Pagination021016
Date PublishedMar-Apr
Type of ArticleArticle
ISBN Number0734-2101
KeywordsALD, CHEMICAL-VAPOR-DEPOSITION, COALESCENCE, GATE ELECTRODES, GROWTH, HIGH-K DIELECTRICS, HIGH-TEMPERATURE, OXYGEN, RUTHENIUM THIN-FILMS, TECHNOLOGY
Abstract

The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)(2)Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O-2 gas and O-2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of similar to 1 angstrom was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of similar to 16 mu Omega cm. The O-2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD. (C) 2011 American Vacuum Society.

DOI10.1116/1.3554691
Division

MaSF

Department

MaSF-E

PID

3004acfda7a7b5f24a8f65cbac9971f2

Alternate TitleJ. Vac. Sci. Technol. A

Go back one page.