|Title||Atomic layer deposition of Ru from CpRu(CO)(2)Et using O-2 gas and O-2 plasma|
|Publication Type||Journal Article|
|Year of Publication||2011|
|Authors||N. Leick, R.OF Verkuijlen, L. Lamagna, E. Langereis, S. Rushworth, F. Roozeboom, M.CM van de Sanden, W.MM Kessels|
|Journal||Journal of Vacuum Science & Technology A|
|Type of Article||Article|
|Keywords||ALD, CHEMICAL-VAPOR-DEPOSITION, COALESCENCE, GATE ELECTRODES, GROWTH, HIGH-K DIELECTRICS, HIGH-TEMPERATURE, OXYGEN, RUTHENIUM THIN-FILMS, TECHNOLOGY|
The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)(2)Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O-2 gas and O-2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of similar to 1 angstrom was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of similar to 16 mu Omega cm. The O-2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD. (C) 2011 American Vacuum Society.
|Alternate Title||J. Vac. Sci. Technol. A|
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