Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources

TitleDamage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources
Publication TypeJournal Article
Year of Publication2011
AuthorsR. Sobierajski, S. Bruijn, A.R Khorsand, E. Louis, R de Kruijs, T. Burian, J. Chalupsky, J. Cihelka, A. Gleeson, J. Grzonka, E.M Gullikson, V. Hajkova, S. Hau-Riege, L. Juha, M. Jurek, D. Klinger, J. Krzywinski, R. London, J.B Pelka, T. Plocinski, M. Rasinski, K. Tiedtke, S. Toleikis, L. Vysin, H. Wabnitz, F. Bijkerk
JournalOptics Express
Volume19
Issue1
Number1
Pagination193-205
Date PublishedJan
Type of ArticleArticle
ISBN Number1094-4087
KeywordsEXTREME-ULTRAVIOLET, films, free-electron laser, ION-BOMBARDMENT, LITHOGRAPHY, RADIATION
Abstract

We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg - FLASH. The damage was studied "post-mortem" by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo2N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N-2, leading to bubbles inside the multilayer structure. (C) 2010 Optical Society of America

DOI10.1364/OE.19.000193
Division

nSI

Department

AXO

PID

14b1c18989673c9f48f9ab5d380adb09

Alternate TitleOpt. Express
LabelOA

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