Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

TitleExcellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
Publication TypeJournal Article
Year of Publication2011
AuthorsG. Dingemans, M.CM van de Sanden, W.MM Kessels
JournalPhysica Status Solidi-Rapid Research Letters
Volume5
Issue1
Pagination22-24
Date PublishedJan
Type of ArticleArticle
ISBN Number1862-6254
Keywordsaluminium oxide, ATOMIC LAYER DEPOSITION, CRYSTALLINE SILICON, DEPOSITION, RECOMBINATION, SI, silicon oxide, SILICON SOLAR-CELLS, Solar cells, SURFACE PASSIVATION, WAFERS
Abstract

It is demonstrated that the application of an ultrathin aluminum oxide (Al2O3) capping film can improve the level of silicon surface passivation obtained by low-temperature synthesized SiO2 profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with S-eff

DOI10.1002/pssr.201004378
Division

MaSF

Department

MaSF-E

PID

08c133effe2739c23e8813aeefba2ff4

Alternate TitlePhys. Status Solidi-Rapid Res. Lett.

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