In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films

TitleIn-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films
Publication TypeJournal Article
Year of Publication2011
AuthorsS. Bruijn, R.WE van de Kruijs, A.E Yakshin, F. Bijkerk
JournalApplied Surface Science
Volume257
Issue7
Pagination2707-2711
Date PublishedJan
Type of ArticleArticle
ISBN Number0169-4332
KeywordsDIFFRACTION, diffusion, INTERDIFFUSION, INTERFACE, molybdenum, MoSi2, multilayers, OPTICS, RATES, silicon, STRUCTURAL RELAXATION, thin films, TRANSITION, X-RAY, X-RAY-DIFFRACTION
Abstract

We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100-275 degrees C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV. (C) 2010 Elsevier B.V. All rights reserved.

DOI10.10.049
Division

nSI

PID

3aa9a1f6c589a9f195581bfbdd64f8ca

Alternate TitleAppl. Surf. Sci.

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