|Title||In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films|
|Publication Type||Journal Article|
|Year of Publication||2011|
|Authors||S. Bruijn, R.WE van de Kruijs, A.E Yakshin, F. Bijkerk|
|Journal||Applied Surface Science|
|Type of Article||Article|
|Keywords||DIFFRACTION, diffusion, INTERDIFFUSION, INTERFACE, molybdenum, MoSi2, multilayers, OPTICS, RATES, silicon, STRUCTURAL RELAXATION, thin films, TRANSITION, X-RAY, X-RAY-DIFFRACTION|
We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100-275 degrees C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV. (C) 2010 Elsevier B.V. All rights reserved.
|Alternate Title||Appl. Surf. Sci.|
Go back one page.