On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

TitleOn the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy
Publication TypeJournal Article
Year of Publication2011
AuthorsA.C Bronneberg, A.HM Smets, M. Creatore, M.CM van de Sanden
JournalJournal of Non-Crystalline Solids
Volume357
Issue3
Pagination884-887
Date PublishedFeb
Type of ArticleArticle
ISBN Number0022-3093
KeywordsABSORPTION-BANDS, CRYSTALLINE, DEPOSITION, Fourier transform infrared, GROWTH, HYDROGENATED AMORPHOUS-SILICON, Microcrystalline silicon, oxidation, PLASMA, SI-H, SOLAR-CELLS, SPECTRA, SPECTROSCOPY, SURFACES
Abstract

Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were recorded directly after deposition and at regular intervals up to 8 months after deposition. The interpretation of the spectra is focused on the Si-H, stretching (2000-2100 cm(-1)), Si-O-Si (1000-1200 cm(-1)), and OxSi-Hy modes (2130-2250 cm(-1)).A short time scale (

DOI10.1016/j.jnoncrysol.2010.11.001
Division

MaSF

Department

MaSF-E

PID

46822b4c9ff718e0877361c1daabdb12

Alternate TitleJ. Non-Cryst. Solids

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