Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

TitleDielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
Publication TypeJournal Article
Year of Publication2011
AuthorsK.B Jinesh, J.L van Hemmen, M.CM van de Sanden, F. Roozeboom, J.H Klootwijk, W.FA Besling, W.MM Kessels
JournalJournal of the Electrochemical Society
Volume158
Issue2
PaginationG21-G26
Type of ArticleArticle
ISBN Number0013-4651
KeywordsALD, ALUMINUM-OXIDE, CAPACITOR, CHARGE, density, PHOTOEMISSION, SI, silicon
Abstract

A comparative electrical characterization study of aluminum oxide (Al2O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2O3 deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity (k = 8.8), than the thermal ALD Al2O3. Remarkably, the plasma-assisted ALD Al2O3 films exhibit more negative fixed oxide charge density than the thermal ALD Al2O3 layers. In addition, it is shown that plasma-assisted ALD Al2O3 exhibits negligible trap-assisted (Poole-Frenkel) conduction unlike the thermal ALD Al2O3 films, resulting in higher breakdown electric fields than the thermal ALD prepared films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3517430] All rights reserved.

DOI10.1149/1.3517430
Division

MaSF

Department

MaSF-E

PID

d092e18b7c8bf7432b8be28470075ebb

Alternate TitleJ. Electrochem. Soc.

Go back one page.