|Title||Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3|
|Publication Type||Journal Article|
|Year of Publication||2011|
|Authors||G. Dingemans, N.M Terlinden, D. Pierreux, H.B Profijt, M.CM van de Sanden, W.MM Kessels|
|Journal||Electrochemical and Solid State Letters|
|Type of Article||Article|
|Keywords||ATOMIC LAYER DEPOSITION, films, silicon, SOLAR-CELLS, SURFACE PASSIVATION, TEMPERATURE|
Differences in Si surface passivation by aluminum oxide (Al2O3) films synthesized using H2O and O-3-based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A low interface defect density of D-it = similar to 1011 eV(-1) cm(-2) was obtained after annealing, independent of the oxidant. This low D-it was found to be vital for the passivation performance. Field-effect passivation was less prominent for H2O-based ALD Al2O3 before and after annealing, whereas for as-deposited ALD films with an O-2 plasma or O-3 as the oxidants, the field-effect passivation was impaired by a very high Dit. (C) 2010 The Electrochemical Society.
|Alternate Title||Electrochem. Solid State Lett.|
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