Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

TitleInfluence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
Publication TypeJournal Article
Year of Publication2011
AuthorsG. Dingemans, N.M Terlinden, D. Pierreux, H.B Profijt, M.CM van de Sanden, W.MM Kessels
JournalElectrochemical and Solid State Letters
Volume14
Issue1
PaginationH1-H4
Type of ArticleArticle
ISBN Number1099-0062
KeywordsATOMIC LAYER DEPOSITION, films, silicon, SOLAR-CELLS, SURFACE PASSIVATION, TEMPERATURE
Abstract

Differences in Si surface passivation by aluminum oxide (Al2O3) films synthesized using H2O and O-3-based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A low interface defect density of D-it = similar to 1011 eV(-1) cm(-2) was obtained after annealing, independent of the oxidant. This low D-it was found to be vital for the passivation performance. Field-effect passivation was less prominent for H2O-based ALD Al2O3 before and after annealing, whereas for as-deposited ALD films with an O-2 plasma or O-3 as the oxidants, the field-effect passivation was impaired by a very high Dit. (C) 2010 The Electrochemical Society.

DOI10.1149/1.3501970
Division

MaSF

Department

MaSF-E

PID

2c3275c1c977d71f9ab2ac05e31fe0b9

Alternate TitleElectrochem. Solid State Lett.

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