Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

TitleIon and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
Publication TypeJournal Article
Year of Publication2011
AuthorsH.B Profijt, P. Kudlacek, M.CM van de Sanden, W.MM Kessels
JournalJournal of the Electrochemical Society
Volume158
Issue4
PaginationG88-G91
Type of ArticleArticle
ISBN Number0013-4651
KeywordsAL2O3, ATOMIC LAYER DEPOSITION, EMISSION, films, PASSIVATION, RADIATION, SI, TIN, VACUUM-ULTRAVIOLET
Abstract

The influence of ions and photons during remote plasma atomic layer deposition (ALD) of metal oxide thin films was investigated for different O-2 gas pressures and plasma powers. The ions have kinetic energies of

DOI10.1149/1.3552663
Division

MaSF

Department

MaSF-E

PID

3c2b612a2f495f6d560b4651b5454bbd

Alternate TitleJ. Electrochem. Soc.

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