Solid-phase crystallization of ultra high growth rate amorphous silicon films

TitleSolid-phase crystallization of ultra high growth rate amorphous silicon films
Publication TypeJournal Article
Year of Publication2012
AuthorsK. Sharma, M.V Ponomarev, M.A Verheijen, O. Kunz, F.D Tichelaar, M.CM van de Sanden, M. Creatore
JournalJournal of Applied Physics
Volume111
Issue10
Pagination5
Date PublishedMay
Type of ArticleArticle; Proceedings Paper
ISBN Number0021-8979
KeywordsCHEMICAL-VAPOR-DEPOSITION, GLASS, GRAIN NUCLEATION, PLASMA, POLYCRYSTALLINE SILICON, RECRYSTALLIZATION, SI-H FILMS, SOLAR-CELLS, TEMPERATURE-DEPENDENCE
Abstract

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (similar to 1.5 mu m) polycrystalline silicon was obtained after SPC of high growth rate (similar to 25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717951]

DOI10.1063/1.4717951
PID

48167db43dd121371ee7159412269b83

Alternate TitleJ. Appl. Phys.

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