Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H

TitleKinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H
Publication TypeJournal Article
Year of Publication2012
AuthorsF. Law, B. Hoex, J. Wang, J. Luther, K. Sharma, M. Creatore, M.CM van de Sanden
JournalThin Solid Films
Volume520
Issue17
Pagination5820-5825
Date PublishedJun
Type of ArticleArticle
ISBN Number0040-6090
KeywordsCELL, EXPANDING THERMAL PLASMA, films, GROWTH-RATES, HYDROGENATED AMORPHOUS-SILICON, kinetics, NUCLEATION, POLYCRYSTALLINE SILICON, Polycrystalline silicon thin film solar, SOLAR-CELL APPLICATIONS, Solid phase crystallization, X-ray diffraction, X-RAY-DIFFRACTION
Abstract

In-situ X-ray diffraction was used to study the dynamics of the solid phase crystallisation (SPC) of hydrogenated amorphous silicon (a-Si:H) films deposited by expanding thermal plasma technique. The Johnson-Mehl-Avrami-Kolmogorov model was used for the analysis of the dynamic data and the activation energy associated with the SPC process was 2.9 eV, which was lower than a-Si:H films deposited by other techniques. Relationships between the Avrami exponent n, the SPC process stability and the subsequent grain structure were demonstrated. Under certain conditions, the films exhibited columnar grain structure with indications of good grain quality, suggesting that these films are suitable to be further developed into solar cell devices. Structure of the grains and the SPC dynamics in this work lend support to prior work that vacancies decorated by hydrogen clusters are related to nucleation sites. (C) 2012 Elsevier B.V. All rights reserved.

DOI10.1016/j.tsf.2012.04.056
PID

66c03d0afecd1459fb5b33c81d1f3197

Alternate TitleThin Solid Films

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