|Title||CF3+ etching silicon surface: A molecular dynamics study|
|Publication Type||Journal Article|
|Year of Publication||2012|
|Authors||C. Zhao, X. Lu, P. He, P. Zhang, W. Sun, J. Zhang, F. Chen, F. Gou|
|Type of Article||Article; Proceedings Paper|
|Keywords||AR+, ATOMISTIC SIMULATIONS, CHLORINE, ENERGETIC CF3+, films, fluorine, Fluorocarbosilyl, MODEL, molecular dynamics, PLASMA, Plasma etching, SI, VAPOR|
In this study, a molecular dynamics simulation method has been employed to investigate CF3+ ions bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a "fluorocarbosilyl" layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF. (C) 2011 Elsevier Ltd. All rights reserved.
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