CF3+ etching silicon surface: A molecular dynamics study

TitleCF3+ etching silicon surface: A molecular dynamics study
Publication TypeJournal Article
Year of Publication2012
AuthorsC. Zhao, X. Lu, P. He, P. Zhang, W. Sun, J. Zhang, F. Chen, F. Gou
JournalVacuum
Volume86
Issue7
Pagination913-916
Date PublishedFeb
Type of ArticleArticle; Proceedings Paper
ISBN Number0042-207X
KeywordsAR+, ATOMISTIC SIMULATIONS, CHLORINE, ENERGETIC CF3+, films, fluorine, Fluorocarbosilyl, MODEL, molecular dynamics, PLASMA, Plasma etching, SI, VAPOR
Abstract

In this study, a molecular dynamics simulation method has been employed to investigate CF3+ ions bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a "fluorocarbosilyl" layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF. (C) 2011 Elsevier Ltd. All rights reserved.

DOI10.1016/j.vacuum.2011.06.003
Division

nSI

Department

SIPC

PID

1475a1365a57fde340e188171247686a

Alternate TitleVacuum

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