Variable roughness development in statically deposited SiO2 thin films: a spatially resolved surface morphology analysis

TitleVariable roughness development in statically deposited SiO2 thin films: a spatially resolved surface morphology analysis
Publication TypeJournal Article
Year of Publication2018
AuthorsA. Meshkova, S.A Starostin, M.CM van de Sanden, H. de Vries
JournalJournal of Physics D: Applied Physics
Volume51
Issue28
Pagination285303
Date Published07/2018
Abstract

For the first time a systematic analysis of the growth front evolution of statically deposited silica films in an atmospheric pressure (AP)-PECVD reactor was carried out. The growth front evolution was studied as a function of time and position in the reactor. Focussed beam spectroscopic ellipsometry was used to assess the local film growth rate and atomic force microscopy (AFM) to analyse the surface roughness development. Spatially resolved AFM analysis showed a strong dependence of the rms roughness on the position, and consequently on the thickness and local deposition rate (LDR), in the reactor. Time resolved surface morphology analysis at two specific positions at high and low LDR indicated different growth exponents β=0.33 and β=0.11, respectively. From the analysis of the static roughness development in the AP-PECVD reactor certain limitations on the deposition time and the maximum local deposition rate for dynamic or web rolled deposition conditions have been elucidated. Moreover, the system is characterized by a set of roughness exponents α=0.9, α=1.6 and global roughness exponent α=2.3. The different values of α indicate an anomalous scaling behaviour of the system whereas different growth exponents β suggest a breakdown of the anti-shadowing mechanism.

DOI10.1088/1361-6463/aacb1c
Division

MaSF

Department

APPFF

PID

176dde4cd1707ed5037610b2f44f631f

Alternate TitleJ. Phys. D: Appl. Phys.
LabelOA

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