|Title||Excite-Probe Determination of the Intersubband Lifetime in Wide Gaas/Algaas Quantum-Wells Using a Far-Infrared Free-Electron Laser|
|Publication Type||Journal Article|
|Year of Publication||1994|
|Authors||B.N Murdin, G.M.H. Knippels, A.FG van der Meer, C.R Pidgeon, C Langerak, M. Helm, W. Heiss, K. Unterrainer, E. Gornik, K.K Geerinck, N.J Hovenier, W.T Wenckebach|
|Journal||Semiconductor Science and Technology|
A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made for the first time in the far infrared. We have used an RF-linac-pumped free-electron laser to determine the relaxation rate associated with intersubband absorption in GaAs/AlGaAs quantum wells having a subband separation smaller than the optical phonon energy. The measurement yields a relaxation lifetime of 40 +/- 5 ps. This is compared with a variety of other results obtained with less direct techniques.
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