Atmospheric-pressure silica-like thin film deposition using 200 kHz/13.56 MHz dual frequency excitation

TitleAtmospheric-pressure silica-like thin film deposition using 200 kHz/13.56 MHz dual frequency excitation
Publication TypeJournal Article
Year of Publication2019
AuthorsY. Liu, F.M Elam, E. Zoethout, S.A Starostin, M.CM van de Sanden, H.W de Vries
JournalJournal of Physics D: Applied Physics
Volume52
Issue35
Pagination355201
Date Published07/2019
Abstract

Atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) was used to synthesize silica-like thin films on polyethylene 2, 6 naphthalate (PEN) substrate with hexamethyldisiloxane (HMDSO) as the precursor and Ar/O2/N2 mixture as the working gas. A dual frequency (DF) excitation consisting of 200 kHz and 13.56 MHz frequencies was employed as the plasma source. The results have shown that compared to the single LF discharges, the DF excitation helps to improve plasma uniformity with less filaments. This could help to reduce the macro-defects and therefore to improve the permeation performance of the barriers. Besides, due to the increased electron density and gas temperature, the DF excitation demonstrates a more efficient breaking of Si-CH3 bonds and therefore more oxidized structures of the deposited silica-like thin films.

DOI10.1088/1361-6463/ab269b
Division

MaSF

Department

APPFF

PID4723334ac7324ab764fe974c4c0fdae8
Alternate TitleJ. Phys. D: Appl. Phys.

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