Using far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si

TitleUsing far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si
Publication TypeJournal Article
Year of Publication1996
AuthorsP.CM Planken, H.PM Pellemans, P.C van Son, J.N Hovenier, T.O Klaassen, W.T Wenckebach, P.W Barmby, J.L Dunn, C.A Bates, C.T Foxon, C Langerak
JournalOptics Communications
Volume124
Number3-4
Pagination258-262
Date PublishedMar 1
ISBN Number0030-4018
Abstract

We demonstrate that we can use far-infrared two-photon excitation with picosecond pulses to measure the resonant polaron effect of the 1s-3d(+2) silicon impurity transition in the middle of the Reststrahlen band of GaAs:Si. Contrary to single-photon measurements, our two-photon measurements do not suffer from the problems of strong reflection and small penetration depth of light in the Reststrahlen band of the GaAs host lattice. As a result, we are able to measure a significant fraction of the magnetic field dependent anticrossing of the 1s-3d(+2) transition with the LO-phonon.

DOI10.1016/0030-4018(95)00676-1
PID

e034b1623e034194468447ceb07cddde

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