| Title | Using far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si |
| Publication Type | Journal Article |
| Year of Publication | 1996 |
| Authors | P.CM Planken, H.PM Pellemans, P.C van Son, J.N Hovenier, T.O Klaassen, W.T Wenckebach, P.W Barmby, J.L Dunn, C.A Bates, C.T Foxon, C Langerak |
| Journal | Optics Communications |
| Volume | 124 |
| Number | 3-4 |
| Pagination | 258-262 |
| Date Published | Mar 1 |
| ISBN Number | 0030-4018 |
| Abstract | We demonstrate that we can use far-infrared two-photon excitation with picosecond pulses to measure the resonant polaron effect of the 1s-3d(+2) silicon impurity transition in the middle of the Reststrahlen band of GaAs:Si. Contrary to single-photon measurements, our two-photon measurements do not suffer from the problems of strong reflection and small penetration depth of light in the Reststrahlen band of the GaAs host lattice. As a result, we are able to measure a significant fraction of the magnetic field dependent anticrossing of the 1s-3d(+2) transition with the LO-phonon. |
| DOI | 10.1016/0030-4018(95)00676-1 |
| PID | e034b1623e034194468447ceb07cddde |
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