Extreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masks

TitleExtreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masks
Publication TypeJournal Article
Year of Publication1996
AuthorsF. Bijkerk, L.A Shmaenok, E. Louis, H.J Voorma, N.B Koster, C. Bruineman, R Bastiaensen, E.WJM van der Drift, J. Romijn, L.EM de Groot, B.AC Rousseeuw, T. Zijlstra, Y.Y Platonov, N.N Salashchenko
JournalMicroelectronic Engineering
Volume30
Number1-4
Pagination183-186
Date PublishedJan
ISBN Number0167-9317
Abstract

Results are reported on the development of a laser plasma source and the fabrication of multilayer reflection masks for extreme ultra-violet lithography (EUVL). A new concept of a target for a laser plasma source is presented including experimental evidence of elimination of macro debris particles from the source. Concerning the fabrication of reflection masks, a new method is described involving a two-layer absorber system protecting the Mo-Si structure against etching damage.

DOI10.1016/0167-9317(95)00222-7
PID

4b35e2c0ed03b6623752dc4c2f2e69fb

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