Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots

TitleDouble-resonance spectroscopy of InAs/GaAs self-assembled quantum dots
Publication TypeJournal Article
Year of Publication2000
AuthorsB.N Murdin, A.R Hollingworth, J.A Barker, D.G Clarke, P.C Findlay, C.R Pidgeon, J.PR Wells, I.V Bradley, S. Malik, R. Murray
JournalPhysical Review B
Volume62
Number12
PaginationR7755-R7758
Date PublishedSep 15
ISBN Number1098-0121; 1550-235X
Abstract

We present far-/near-infrared double resonance measurements of self-assembled InAs/GaAs quantum dots. The far-infrared resonance is unambiguously associated with a bound-bound intraband transition in the neutral dots. The results show that the interband photoluminescence (PL) lines originate from conduction levels with successively increasing in-plane quantum numbers. We determine the confinement energies for both electrons and holes in the same dots. Furthermore, we show that the inhomogeneous broadening of the PL cannot be attributed solely to size and composition fluctuation.

DOI10.1103/PhysRevB.62.R7755
PID

bdb1e878109fe9477f527e32b7fad1f0

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