Double resonance study of hole burning in self-assembled quantum dots

TitleDouble resonance study of hole burning in self-assembled quantum dots
Publication TypeJournal Article
Year of Publication2002
AuthorsD.G Clarke, C.R Pidgeon, J.PR Wells, I.V Bradley, R. Murray, B.N Murdin
JournalPhysica B-Condensed Matter
Volume314
Number1-4
Pagination474-476
Date PublishedMar
Type of ArticleArticle
ISBN Number0921-4526
Accession NumberISI:000175997500102
Keywordsinhomogeneous broadening, intraband transitions, PHOTOCONDUCTIVITY, quantum dots, SPECTROSCOPY
Abstract

We present far-infrared (FIR) modulated photo luminescence measurements of self-assembled InAs/GaAs quantum dots. The sample was annealed to remove any indium profile roughness from within the quantum dots and thus from the inhomogeneous broadening. The annealed sample shows resonant FIR excitations just as the unannealed sample. but exhibits spectral hole burning unlike the unannealed sample. The results indicate that indium roughness is one of the primary inhomogeneous broadening mechanisms in self-assembled quantum dots. (C) 2002 Elsevier Science B.V. All rights reserved.

URL<Go to ISI>://000175997500102
Division

GUTHz

Department

FELIX

PID

4a5e202a8d61305166dbcc51435728c9

Alternate TitlePhysica B

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