Publications
Surface passivation of phosphorus-diffused n(+)-type emitters by plasma-assisted atomic-layer deposited Al2O3, Phys. Status Solidi-Rapid Res. Lett. 6 (2012) 4-6.
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Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures, J. Appl. Phys. 111 (2012) 064303.
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Molecular dynamics simulations of low-energy Cl atoms etching Si(100) surface, Acta Phys. Sin. 460 (2011) 045209.
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Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides, J. Electrochem. Soc. 158 (2011) G88-G91.
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Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film, Phys. Status Solidi-Rapid Res. Lett. 5 (2011) 22-24.
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Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films, J. Electrochem. Soc. 158 (2011) G21-G26.
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Mid-infrared spectroscopy of the Er-related donor state in Si/Si : Er3+ nanolayers, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 1-3146 (2008) 131-134.
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Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon, Phys. Rev. B 1678 (2008) 7.
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Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium, J. Appl. Phys. 1103 (2008) 5.
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Photoluminescence quenching in InP : Yb with a free-electron laser, Appl. Surf. Sci. 208 (2003) 23-26.
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