Publications

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Author Title Type [ Year(Asc)]
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2012
B. Hoex, M.CM van de Sanden, J. Schmidt, R. Brendel, W.MM Kessels,  Surface passivation of phosphorus-diffused n(+)-type emitters by plasma-assisted atomic-layer deposited Al2O3, Phys. Status Solidi-Rapid Res. Lett. 6 (2012) 4-6.
OA 
S. Bruijn, R.WE van de Kruijs, A.E Yakshin, F. Bijkerk,  Ion assisted growth of B4C diffusion barrier layers in Mo/Si multilayered structures, J. Appl. Phys. 111 (2012) 064303.
C. Zhao, X. Lu, P. He, P. Zhang, W. Sun, J. Zhang, F. Chen, F. Gou,  CF3+ etching silicon surface: A molecular dynamics study, Vacuum 86 (2012) 913-916.
2011
P.N He, J.P Ning, Y.M Qin, C.L Zhao, F.J Gou,  Molecular dynamics simulations of low-energy Cl atoms etching Si(100) surface, Acta Phys. Sin. 460 (2011) 045209.
OA 
H.B Profijt, P. Kudlacek, M.CM van de Sanden, W.MM Kessels,  Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides, J. Electrochem. Soc. 158 (2011) G88-G91.
G. Dingemans, M.CM van de Sanden, W.MM Kessels,  Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film, Phys. Status Solidi-Rapid Res. Lett. 5 (2011) 22-24.
K.B Jinesh, J.L van Hemmen, M.CM van de Sanden, F. Roozeboom, J.H Klootwijk, W.FA Besling, W.MM Kessels,  Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films, J. Electrochem. Soc. 158 (2011) G21-G26.
2010
V de Rooij-Lohmann, L.W Veldhuizen, E. Zoethout, A.E Yakshin, R.WE van de Kruijs, B.J Thijsse, M. Gorgoi, F. Schafers, F. Bijkerk,  Chemical interaction of B4C, B, and C with Mo/Si layered structures, J. Appl. Phys. 9108 (2010) 6.
V de Rooij-Lohmann, I.V Kozhevnikov, L. Peverini, E. Ziegler, R. Cuerno, F. Bijkerk, A.E Yakshin,  Roughness evolution of Si surfaces upon Ar ion erosion, Appl. Surf. Sci. 16256 (2010) 5011-5014.
2008
S.G Pavlov, H.W Hubers, U. Bottger, R.K Zhukavin, V.N Shastin, J.N Hovenier, B. Redlich, N.V Abrosimov, H. Riemann,  Terahertz Raman laser based on silicon doped with phosphorus, Appl. Phys. Lett. 992 (2008) 3.
I. Izeddin, M.AJ Klik, N.Q Vinh, M.S Bresler, T. Gregorkiewicz,  Mid-infrared spectroscopy of the Er-related donor state in Si/Si : Er3+ nanolayers, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 1-3146 (2008) 131-134.
S.G Pavlov, H.W Hubers, P.M Haas, J.N Hovenier, T.O Klaassen, R.K Zhukavin, V.N Shastin, D.A Carder, B. Redlich,  Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon, Phys. Rev. B 1678 (2008) 7.
K.W Jobson, J.PR Wells, R.EI Schropp, N.Q Vinh, J.I Dijkhuis,  Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium, J. Appl. Phys. 1103 (2008) 5.
I. Nedelcu, R de Kruijs, A.E Yakshin, F. Bijkerk,  Thermally enhanced interdiffusion in Mo/Si multilayers, J. Appl. Phys. 8103 (2008) 6.
2003
M.AJ Klik, J.PR Wells, T. Gregorkiewicz,  Photoluminescence quenching in InP : Yb with a free-electron laser, Appl. Surf. Sci. 208 (2003) 23-26.