DIFFER

M. S. Skolnick

First name
M.
Middle name
S.
Last name
Skolnick
Zibik, E. ., Grange, T. ., Carpenter, B. A., Ferreira, R. ., Bastard, G. ., Vinh, N. Q., … Wilson, L. . (2008). Intersublevel polaron dephasing in self-assembled quantum dots. Physical Review B, 77, 4. Retrieved from <Go to ISI>://000252863100009 (Original work published 2025)
Grange, T. ., Zibik, E. ., Ferreira, R. ., Bastard, G. ., Carpenter, B. A., Phillips, P. J., … Wilson, L. . (2007). Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots. New Journal of Physics, 9. Retrieved from <Go to ISI>://000249111500007 (Original work published 2025)
Zibik, E. ., Wilson, L. ., Green, R. ., Bastard, G. ., Ferreira, R. ., Phillips, P. J., … Hopkinson, M. . (2005). The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 26, 408-412. Retrieved from <Go to ISI>://000227249000084 (Original work published 2025)
Zibik, E. ., Wilson, L. ., Green, R. ., Wells, J. P. R., Phillips, P. J., Carder, D. A., … Hopkinson, M. . (2004). Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 21, 405-408. Retrieved from <Go to ISI>://000220873300053 (Original work published 2025)
Zibik, E. ., Wilson, L. ., Green, R. ., Bastard, G. ., Ferreira, R. ., Phillips, P. J., … Hopkinson, M. . (2004). Intraband relaxation via polaron decay in InAs self-assembled quantum dots. Physical Review B, 70. Retrieved from <Go to ISI>://000224856000011 (Original work published 2025)
Zibik, E. ., Wilson, L. ., Green, R. ., Bastard, G. ., Ferreira, R. ., Wells, J. P. R., … Hopkinson, M. . (2004). Polaron Decay and Inter-Level Transfer in InAs/GaAs Self-Assembled Quantum Dots. Physica Status Solidi (c), 1, 2613-2616.
Zibik, E. ., Wilson, L. ., Green, R. ., Wells, J. P. R., Phillips, P. J., Carder, D. A., … Hopkinson, M. . (2004). Polaron relaxation channel in InAs/GaAs self-assembled quantum dots. Semiconductor Science and Technology, 19, S316-S318. Retrieved from <Go to ISI>://000220860700106 (Original work published 2025)