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Polaron relaxation channel in InAs/GaAs self-assembled quantum dots

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Abstract

Polaron relaxation in n-type InAs quantum dots has been studied by picosecond time-resolved pump-probe spectroscopy. Due to inhomogeneous broadening of the absorption features associated with transitions between s-like ground state and p-like first excited state, the energy dependence of the polaron decay time has been measured over a wide spectral region from 40 to 60 meV. The polaron lifetime increases continuously from 20 ps at 40 meV to 65 ps at 54 meV. By analysing the temperature dependence of the polaron lifetime the main polaron decay channel has been identified as the cubic overtone (2LA) decay channel. By fitting the experimental data we extract the LO-phonon lifetime of 10 +/- 2 ps (at 33 meV) for InAs quantum dots and electron-phonon coupling strength of 6.2 +/- 0.5 meV.

Year of Publication
2004
Journal
Semiconductor Science and Technology
Volume
19
Number
4
Number of Pages
S316-S318
Date Published
Apr
Type of Article
Article
ISBN Number
0268-1242
Accession Number
ISI:000220860700106
URL
PId
5743e32aab0dcce53fb6827b78d2b30b
Alternate Journal
Semicond. Sci. Technol.
Journal Article
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