S. Dobrovolskiy

Dobrovolskiy, S., Yakshin, A. E., Tichelaar, F. D., Verhoeven, J., Louis, E., & Bijkerk, F. (2010). Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 268, 560-567. Retrieved from <Go to ISI>://000276053700004 (Original work published 2025)

Dobrovolskiy, S., Yakshin, A. E., Kessels, M. J. H., & Verhoeven, J. (2005). The application of energetic CHx+ ions to form a Si/SiC multilayer system for reflection of radiation between 20 and 80 nm. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 237, 533-542. Retrieved from <Go to ISI>://000231777800006 (Original work published 2025)