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The application of energetic CHx+ ions to form a Si/SiC multilayer system for reflection of radiation between 20 and 80 nm

Label Value
Author
Year of Publication
2005
Journal
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
Volume
237
Number
3-4
Number of Pages
533-542
Date Published
08/2005
ISBN Number
0168-583X
Accession Number
ISI:000231777800006
URL
PId
8d841e086a3df309bab49aeeab93b4e4
Journal Article
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Citation
Dobrovolskiy, S., Yakshin, A. E., Kessels, M. J. H., & Verhoeven, J. (2005). The application of energetic CHx+ ions to form a Si/SiC multilayer system for reflection of radiation between 20 and 80 nm. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 237, 533-542. Retrieved from <Go to ISI>://000231777800006 (Original work published 2005)