J. Zhang

Zhang, J. ., Huang, J. ., Chang, J. F., Wu, C. R., Heidbrink, W. W., Salewski, M. ., … Wan, B. . (2018). Fast ion D-alpha measurements using a bandpass-filtered system on EAST. Review of Scientific Instruments, 89(10), 10D121. https://doi.org/10.1063/1.5038828

Zhao, C. ., Lu, X. ., He, P. ., Zhang, P. ., Sun, W. ., Zhang, J. ., … Gou, F. . (2012). CF3+ etching silicon surface: A molecular dynamics study. Vacuum, 86(7), 913-916. https://doi.org/10.1016/j.vacuum.2011.06.003 (Original work published 2025)

Califano, M. ., Vinh, N. Q., Phillips, P. J., Ikonic, Z. ., Kelsall, R. W., Harrison, P. ., … Cullis, A. G. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved from <Go to ISI>://000243895600100 (Original work published 2025)