J. Zhang

Zhang, J., Huang, J., Chang, J. F., Wu, C. R., Heidbrink, W. W., Salewski, M., … Wan, B. (2018). Fast ion D-alpha measurements using a bandpass-filtered system on EAST. Review of Scientific Instruments, 89(10), 10D121. https://doi.org/10.1063/1.5038828

Zhao, C., Lu, X., He, P., Zhang, P., Sun, W., Zhang, J., … Gou, F. (2012). CF3+ etching silicon surface: A molecular dynamics study. Vacuum, 86(7), 913-916. https://doi.org/10.1016/j.vacuum.2011.06.003 (Original work published 2025)

Califano, M., Vinh, N. Q., Phillips, P. J., Ikonic, Z., Kelsall, R. W., Harrison, P., … Cullis, A. G. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved from <Go to ISI>://000243895600100 (Original work published 2025)