DIFFER
DIFFER Publication
Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness
| Label | Value |
|---|---|
| Author | |
| Year of Publication |
2007
|
| Journal |
Physical Review B
|
| Volume |
75
|
| Number |
4
|
| Date Published |
01/2007
|
| ISBN Number |
1098-0121
|
| Accession Number |
ISI:000243895600100
|
| URL | |
| PId |
3d6563e23717aefaec933dc4643ec279
|
Journal Article
|
|
| Download citation |
Citation
Califano, M., Vinh, N. Q., Phillips, P. J., Ikonic, Z., Kelsall, R. W., Harrison, P., … Cullis, A. G. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved from <Go to ISI>://000243895600100 (Original work published 2007)