DIFFER

B. N. Murdin

First name
B.
Middle name
N.
Last name
Murdin
Vinh, N. Q., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Greenland, P. T., Lynch, S. A., et al. (2013). Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon. Physical Review X, 3(1), 9. https://doi.org/10.1103/PhysRevX.3.011019 (Original work published Mar)
Greenland, P. T., Lynch, S. A., van der Meer, A. F. G., Murdin, B. N., Pidgeon, C. R., Redlich, B., et al. (2010). Coherent control of Rydberg states in silicon. Nature, 465, 1057-U116. Retrieved de ://000279056900048 (Original work published Jun)
Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Mussler, G., Grutzmacher, D., & Bauer, G. (2009). Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy. Physical Review Letters, 102, 4. Retrieved de ://000265082500066 (Original work published Apr)
Vinh, N. Q., Greenland, P. T., Litvinenko, K., Redlich, B., van der Meer, A. F. G., Lynch, S. A., et al. (2008). Silicon as a model ion trap: Time domain measurements of donor Rydberg states. Proceedings Of The National Academy Of Sciences Of The United States Of America, 105, 10649-10653. Retrieved de ://000258308500007 (Original work published Aug)
Califano, M., Vinh, N. Q., Phillips, P. J., Ikonic, Z., Kelsall, R. W., Harrison, P., et al. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved de ://000243895600100 (Original work published Jan)
Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., et al. (2007). Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments. New Journal Of Physics, 9, 128. https://doi.org/10.1088/1367-2630/9/5/128
Murdin, B. N., Litvinenko, K., Clarke, D. G., Pidgeon, C. R., Murzyn, P., Phillips, P. J., et al. (2006). Spin relaxation by transient monopolar and bipolar optical orientation. Physical Review Letters, 96. Retrieved de ://000235905700049 (Original work published Mar)
Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Murdin, B. N., Phillips, J. P., et al. (2006). Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments. Applied Physics Letters, 89. Retrieved de ://000242220000011 (Original work published Nov)
Pidgeon, C. R., Phillips, P. J., Carder, D., Murdin, B. N., Fromherz, T., Paul, D. J., et al. (2005). Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy. Semiconductor Science And Technology, 20, L50-L52. Retrieved de ://000232992800002 (Original work published Oct)
Galbraith, I., Chari, R., Pellegrini, S., Phillips, P. J., Dent, C. J., van der Meer, A. F. G., et al. (2005). Excitonic signatures in the photolumineseence and terahertz absorption of a GaAs/AlxGa1-xAs multiple quantum well. Physical Review B, 71. Retrieved de ://000228013600007 (Original work published Feb)