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Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments

Label Value
Author
P. Rauter
T. Fromherz
N. Q. Vinh
B. N. Murdin
J. P. Phillips
C. R. Pidgeon
L. Diehl
G. Dehlinger
D. Grutzmacher
M. Zhao
W. X. Ni
G. Bauer
Year of Publication
2007
Journal
New Journal of Physics
Volume
9
Number of Pages
128
DOI
10.1088/1367-2630/9/5/128
PId
82107e7779e36f796bd56d40c877bc61
Label
OA
Journal Article
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Citation
Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., … Bauer, G. (2007). Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments. New Journal of Physics, 9, 128. https://doi.org/10.1088/1367-2630/9/5/128