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Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments

Label Value
Author
Year of Publication
2007
Journal
New Journal of Physics
Volume
9
Number of Pages
128
DOI
PId
82107e7779e36f796bd56d40c877bc61
Label
OA
Journal Article
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Citation
Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., … Bauer, G. (2007). Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments. New Journal of Physics, 9, 128. https://doi.org/10.1088/1367-2630/9/5/128