DIFFER

C. R. Pidgeon

First name
C.
Middle name
R.
Last name
Pidgeon
Vinh, N. Q., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Greenland, P. T., Lynch, S. A., et al. (2013). Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon. Physical Review X, 3(1), 9. https://doi.org/10.1103/PhysRevX.3.011019 (Original work published Mar)
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Greenland, P. T., Lynch, S. A., van der Meer, A. F. G., Murdin, B. N., Pidgeon, C. R., Redlich, B., et al. (2010). Coherent control of Rydberg states in silicon. Nature, 465, 1057-U116. Retrieved de ://000279056900048 (Original work published Jun)
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Jobson, K. W., Wells, J. P. R., Vinh, N. Q., Phillips, P. J., Pidgeon, C. R., & Dijkhuis, J. I. (2008). Mid-infrared pump-probe spectroscopy of Si-H stretch modes in porous silicon. Optical Materials, 30, 740-742. Retrieved de ://000252554800020 (Original work published Jan)
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Vinh, N. Q., Greenland, P. T., Litvinenko, K., Redlich, B., van der Meer, A. F. G., Lynch, S. A., et al. (2008). Silicon as a model ion trap: Time domain measurements of donor Rydberg states. Proceedings Of The National Academy Of Sciences Of The United States Of America, 105, 10649-10653. Retrieved de ://000258308500007 (Original work published Aug)
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Califano, M., Vinh, N. Q., Phillips, P. J., Ikonic, Z., Kelsall, R. W., Harrison, P., et al. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved de ://000243895600100 (Original work published Jan)
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Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., et al. (2007). Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments. New Journal Of Physics, 9, 128. https://doi.org/10.1088/1367-2630/9/5/128
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Murdin, B. N., Litvinenko, K., Clarke, D. G., Pidgeon, C. R., Murzyn, P., Phillips, P. J., et al. (2006). Spin relaxation by transient monopolar and bipolar optical orientation. Physical Review Letters, 96. Retrieved de ://000235905700049 (Original work published Mar)
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Jobson, K. W., Wells, J. P. R., Vinh, N. Q., Phillips, P. J., Pidgeon, C. R., & Dijkhuis, J. I. (2006). Vibrational relaxation pathways in porous silicon: A time-resolved infrared spectroscopic study. Physical Review B, 74. Retrieved de ://000241723700047 (Original work published Oct)
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Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Murdin, B. N., Phillips, J. P., et al. (2006). Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments. Applied Physics Letters, 89. Retrieved de ://000242220000011 (Original work published Nov)
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Kelsall, R. W., Ikonic, Z., Murzyn, P., Pidgeon, C. R., Phillips, P. J., Carder, D., et al. (2005). Intersubband lifetimes in p-Si/SiGe terahertz quantum cascade heterostructures. Physical Review B, 71. Retrieved de ://000228065500101 (Original work published Mar)
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