G. Dingemans

Dingemans, G. ., Einsele, F. ., Beyer, W. ., van de Sanden, M. C. M., & Kessels, W. M. M. (2012). Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface. Journal of Applied Physics, 111(9), 093713. https://doi.org/10.1063/1.4709729 (Original work published 2025)

Dingemans, G. ., van de Sanden, M. C. M., & Kessels, W. M. M. (2012). Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses. Plasma Processes and Polymers, 9(8), 761-771. https://doi.org/10.1002/ppap.201100196 (Original work published 2025)

Dingemans, G. ., Mandoc, M. M., Bordihn, S. ., van de Sanden, M. C. M., & Kessels, W. M. M. (2011). Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks. Applied Physics Letters, 98(22), 222102. https://doi.org/10.1063/1.3595940 (Original work published 2025)

Dingemans, G. ., Terlinden, N. M., Verheijen, M. A., van de Sanden, M. C. M., & Kessels, W. M. M. (2011). Controlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition. Journal of Applied Physics, 110(9), 6. https://doi.org/10.1063/1.3658246 (Original work published 2025)

Dingemans, G. ., Clark, A. ., van Delft, J. A., van de Sanden, M. C. M., & Kessels, W. M. M. (2011). Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100). Journal of Applied Physics, 109(11), 9. https://doi.org/10.1063/1.3595691 (Original work published 2025)

Dingemans, G. ., Terlinden, N. M., Pierreux, D. ., Profijt, H. B., van de Sanden, M. C. M., & Kessels, W. M. M. (2011). Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3. Electrochemical and Solid State Letters, 14(1), H1-H4. https://doi.org/10.1149/1.3501970

Meier, M. ., Muthmann, S. ., Flikweert, A. J., Dingemans, G. ., van de Sanden, M. C. M., & Gordijn, A. . (2011). In-situ transmission measurements as process control for thin-film silicon solar cells. Solar Energy Materials and Solar Cells, 95(12), 3328-3332. https://doi.org/10.1016/j.solmat.2011.07.022 (Original work published 2025)

Dingemans, G. ., van de Sanden, M. C. M., & Kessels, W. M. M. (2011). Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film. Physica Status Solidi-Rapid Research Letters, 5(1), 22-24. https://doi.org/10.1002/pssr.201004378 (Original work published 2025)