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Mid-infrared induced quenching of photoluminescence in Si : Er
| Label | Value |
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| Author | |
| Abstract |
The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 mum, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. (C) 2001 Elsevier Science B.V. All rights reserved. |
| Year of Publication |
2001
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| Journal |
Materials Science and Engineering B-Solid State Materials for Advanced Technology
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| Volume |
81
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| Number |
1-3
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| Number of Pages |
80-82
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| Date Published |
04/2001
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| ISBN Number |
0921-5107
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| DOI | |
| PId |
160c8ffeb6db3d6c06356ad3377f765c
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Journal Article
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| Download citation |
Citation
Forcales, M., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Mid-infrared induced quenching of photoluminescence in Si : Er. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 81, 80-82. https://doi.org/10.1016/s0921-5107(00)00741-8 (Original work published 2001)