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Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

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Abstract

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.

Year of Publication
2010
Journal
Semiconductor Science and Technology
Volume
25
Number
9
Number of Pages
7
Date Published
09/2010
Type of Article
Article
ISBN Number
0268-1242
Accession Number
ISI:000281221200006
URL
PId
4e79a7505b4b57c3632c87b955bc52b2
Alternate Journal
Semicond. Sci. Technol.
Journal Article
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Citation
Wittmann, B., Danilov, S. N., Bel’kov, V. V., Tarasenko, S. A., Novik, E. G., Buhmann, H., … Ganichev, S. D. (2010). Circular photogalvanic effect in HgTe/CdHgTe quantum well structures. Semiconductor Science and Technology, 25, 7. Retrieved from <Go to ISI>://000281221200006 (Original work published 2010)