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Insulating‐Passivating Interfaces for Narrow‐Bandgap Tin‐Lead Perovskites Enable High‐Photovoltage in Single‐ and Double‐Junction Solar Cells

Label Value
Author
V. Vijayakumar
C. H. L. Weijtens
L. Bellini
N. R.M. Schipper
I. Taupitz
M. Simmonds
A. S. Lambooij
A. Vijayan
L. M. Kessels
S. V. Quiroz Monnens
G. J. W. Aalbers
W. H. M. Remmerswaal
S. C. J. Meskers
S. F. Hu
J. Wang
M. M. Wienk
H. J. Snaith
S. Albrecht
R. A. J. Janssen
Year of Publication
2026
Journal
Advanced Functional Materials
Volume
36
Number of Pages
e78943
DOI
10.1002/adfm.78943
PId
31f317e930e8841f30ef3184501f167c
Alternate Journal
Adv. Funct. Mater.
Label
OA
Journal Article
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Citation
Vijayakumar, V., Weijtens, C. H. L., Bellini, L., Schipper, N. R., Taupitz, I., Simmonds, M., … Janssen, R. A. J. (2026). Insulating‐Passivating Interfaces for Narrow‐Bandgap Tin‐Lead Perovskites Enable High‐Photovoltage in Single‐ and Double‐Junction Solar Cells. Advanced Functional Materials, 36, e78943. https://doi.org/10.1002/adfm.78943