Free-Electron Laser-Induced Bleaching of the Intersubband Absorption in Semiconductor Quantum-Wells

TitleFree-Electron Laser-Induced Bleaching of the Intersubband Absorption in Semiconductor Quantum-Wells
Publication TypeJournal Article
Year of Publication1994
AuthorsB.N Murdin, M. Helm, C.R Pidgeon, K.K Geerinck, N. Hovenyer, W.T Wenckebach, A.FG van der Meer, P.W van Amersfoort
JournalNuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment
Volume341
Number1-3
Pagination178-180
Date PublishedMar 1
ISBN Number0168-9002
Abstract

The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm2. When fitted with a two-level system, the saturation intensity is found to be 10 kW/CM2, which corresponds to a characteristic time constant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width.

DOI10.1016/0168-9002(94)90343-3
PID

df8fd44324361fbb02f330929e53cde9

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