N. Q. Vinh

Minissale, S. ., Vinh, N. Q., & Gregorkiewicz, T. . (2008). Pump-probe investigations of THz transitions in Si/Si : Er3+ nanolayers. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 146, 160-162. Retrieved from <Go to ISI>://000252668300033 (Original work published 2025)

Aivaliotis, P. ., Zibik, E. ., Wilson, L. ., Cockburn, J. ., Hopkinson, M. ., & Vinh, N. Q. (2008). Two photon absorption in quantum dot-in-a-well infrared photodetectors. Applied Physics Letters, 92, 3. Retrieved from <Go to ISI>://000252470900103 (Original work published 2025)

Califano, M. ., Vinh, N. Q., Phillips, P. J., Ikonic, Z. ., Kelsall, R. W., Harrison, P. ., … Cullis, A. G. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved from <Go to ISI>://000243895600100 (Original work published 2025)

Vinh, N. Q., Minissale, S. ., Vrielinck, H. ., & Gregorkiewicz, T. . (2007). Concentration of Er3+ ions contributing to 1.5-mu m emission in Si/Si : Er nanolayers. Physical Review B, 76. Retrieved from <Go to ISI>://000249155400091 (Original work published 2025)

Izeddin, I. ., Klik, M. A. J., Vinh, N. Q., Bresler, M. S., & Gregorkiewicz, T. . (2007). Donor-state-enabling er-related luminescence in silicon: Direct identification and resonant excitation. Physical Review Letters, 99. Retrieved from <Go to ISI>://000248866900049 (Original work published 2025)

Rauter, P. ., Fromherz, T. ., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., … Bauer, G. . (2007). Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments. New Journal of Physics, 9, 128. https://doi.org/10.1088/1367-2630/9/5/128

Kohli, K. K., Davies, G. ., Vinh, N. Q., West, D. ., Estreicher, S. ., Gregorkiewicz, T. ., … Itoh, K. M. (2006). Isotope dependence of the lifetime of the 1136-cm(-1) vibration of oxygen in silicon. Physical Review Letters, 96. Retrieved from <Go to ISI>://000238161400032 (Original work published 2025)

Jobson, K. W., Wells, J. P. R., Vinh, N. Q., Phillips, P. J., Pidgeon, C. R., & Dijkhuis, J. I. (2006). Vibrational relaxation pathways in porous silicon: A time-resolved infrared spectroscopic study. Physical Review B, 74. Retrieved from <Go to ISI>://000241723700047 (Original work published 2025)

Rauter, P. ., Fromherz, T. ., Bauer, G. ., Vinh, N. Q., Murdin, B. N., Phillips, J. P., … Grutzmacher, D. . (2006). Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments. Applied Physics Letters, 89. Retrieved from <Go to ISI>://000242220000011 (Original work published 2025)

Vinh, N. Q., Minissale, S. ., Andreev, B. A., & Gregorkiewicz, T. . (2005). The Auger process of luminescence quenching in Si/Si : Er multinanolayers. Journal of Physics-Condensed Matter, 17, S2191-S2195. Retrieved from <Go to ISI>://000230663100007 (Original work published 2025)