N. Q. Vinh

Aivaliotis, P., Zibik, E., Wilson, L., Cockburn, J., Hopkinson, M., & Vinh, N. Q. (2008). Two photon absorption in quantum dot-in-a-well infrared photodetectors. Applied Physics Letters, 92, 3. Retrieved from <Go to ISI>://000252470900103 (Original work published 2025)

Vinh, N. Q., Greenland, P. T., Litvinenko, K., Redlich, B., van der Meer, A. F. G., Lynch, S. A., … Murdin, B. N. (2008). Silicon as a model ion trap: Time domain measurements of donor Rydberg states. Proceedings of the National Academy of Sciences of the United States of America, 105, 10649-10653. Retrieved from <Go to ISI>://000258308500007 (Original work published 2025)

Califano, M., Vinh, N. Q., Phillips, P. J., Ikonic, Z., Kelsall, R. W., Harrison, P., … Cullis, A. G. (2007). Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75. Retrieved from <Go to ISI>://000243895600100 (Original work published 2025)

Vinh, N. Q., Minissale, S., Vrielinck, H., & Gregorkiewicz, T. (2007). Concentration of Er3+ ions contributing to 1.5-mu m emission in Si/Si : Er nanolayers. Physical Review B, 76. Retrieved from <Go to ISI>://000249155400091 (Original work published 2025)

Izeddin, I., Klik, M. A. J., Vinh, N. Q., Bresler, M. S., & Gregorkiewicz, T. (2007). Donor-state-enabling er-related luminescence in silicon: Direct identification and resonant excitation. Physical Review Letters, 99. Retrieved from <Go to ISI>://000248866900049 (Original work published 2025)

Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., … Bauer, G. (2007). Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments. New Journal of Physics, 9, 128. https://doi.org/10.1088/1367-2630/9/5/128

Kohli, K. K., Davies, G., Vinh, N. Q., West, D., Estreicher, S., Gregorkiewicz, T., … Itoh, K. M. (2006). Isotope dependence of the lifetime of the 1136-cm(-1) vibration of oxygen in silicon. Physical Review Letters, 96. Retrieved from <Go to ISI>://000238161400032 (Original work published 2025)

Jobson, K. W., Wells, J. P. R., Vinh, N. Q., Phillips, P. J., Pidgeon, C. R., & Dijkhuis, J. I. (2006). Vibrational relaxation pathways in porous silicon: A time-resolved infrared spectroscopic study. Physical Review B, 74. Retrieved from <Go to ISI>://000241723700047 (Original work published 2025)

Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Murdin, B. N., Phillips, J. P., … Grutzmacher, D. (2006). Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments. Applied Physics Letters, 89. Retrieved from <Go to ISI>://000242220000011 (Original work published 2025)

Vinh, N. Q., Minissale, S., Andreev, B. A., & Gregorkiewicz, T. (2005). The Auger process of luminescence quenching in Si/Si : Er multinanolayers. Journal of Physics-Condensed Matter, 17, S2191-S2195. Retrieved from <Go to ISI>://000230663100007 (Original work published 2025)