DIFFER

H. Riemann

First name
H.
Last name
Riemann
Bosch, H. S., Wolf, R. C., Andreeva, T. ., Baldzuhn, J. ., Birus, D. ., Bluhm, T. ., … Szabo, V. . (2013). Technical challenges in the construction of the steady-state stellarator Wendelstein 7-X. Nuclear Fusion, 53, 126001. https://doi.org/10.1088/0029-5515/53/12/126001 (Original work published 2024)
Pavlov, S. G., Bottger, U. ., Eichholz, R. ., Abrosimov, N. V., Riemann, H. ., Shastin, V. N., … Hubers, H. W. (2009). Terahertz lasing from silicon by infrared Raman scattering on bismuth centers. Applied Physics Letters, 95, 3. Retrieved from <Go to ISI>://000272052200010 (Original work published 2024)
Pavlov, S. G., Bottger, U. ., Hovenier, J. N., Abrosimov, N. V., Riemann, H. ., Zhukavin, R. K., … Hubers, H. W. (2009). Stimulated terahertz emission due to electronic Raman scattering in silicon. Applied Physics Letters, 94, 3. Retrieved from <Go to ISI>://000265738700012 (Original work published 2024)
Pavlov, S. G., Hubers, H. W., Bottger, U. ., Zhukavin, R. K., Shastin, V. N., Hovenier, J. N., … Riemann, H. . (2008). Terahertz Raman laser based on silicon doped with phosphorus. Applied Physics Letters, 92, 3. Retrieved from <Go to ISI>://000253761500011 (Original work published 2024)
Pavlov, S. G., Hubers, H. W., Hovenier, J. N., Klaassen, T. O., Carder, D. A., Phillips, P. J., … Shastin, V. N. (2006). Stimulated terahertz stokes emission of silicon crystals doped with antimony donors. Physical Review Letters, 96. Retrieved from <Go to ISI>://000234969300102 (Original work published 2024)
Zhukavin, R. K., Gaponova, D. M., Muravjov, A. V., Orlova, E. E., Shastin, V. N., Pavlov, S. G., … van der Meer, A. F. G. (2003). Laser transitions under resonant optical pumping of donor centres in Si : P. Applied Physics B-Lasers and Optics, 76, 613-616. Retrieved from <Go to ISI>://000183531900020 (Original work published 2024)
Shastin, V. N., Zhukavin, R. K., Orlova, E. E., Pavlov, S. G., Rummeli, M. H., Hubers, H. W., … van der Meer, A. F. G. (2002). Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters, 80, 3512-3514. Retrieved from <Go to ISI>://000175464100016 (Original work published 2024)