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Using far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si
| Label | Value |
|---|---|
| Author | |
| Abstract |
We demonstrate that we can use far-infrared two-photon excitation with picosecond pulses to measure the resonant polaron effect of the 1s-3d(+2) silicon impurity transition in the middle of the Reststrahlen band of GaAs:Si. Contrary to single-photon measurements, our two-photon measurements do not suffer from the problems of strong reflection and small penetration depth of light in the Reststrahlen band of the GaAs host lattice. As a result, we are able to measure a significant fraction of the magnetic field dependent anticrossing of the 1s-3d(+2) transition with the LO-phonon. |
| Year of Publication |
1996
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| Journal |
Optics Communications
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| Volume |
124
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| Number |
3-4
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| Number of Pages |
258-262
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| Date Published |
03/1996
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| ISBN Number |
0030-4018
|
| DOI | |
| PId |
e034b1623e034194468447ceb07cddde
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Journal Article
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| Download citation |
Citation
Planken, P. C. M., Pellemans, H. P. M., van Son, P. C., Hovenier, J. N., Klaassen, T. O., Wenckebach, W. T., … Langerak, C. J. (1996). Using far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si. Optics Communications, 124, 258-262. https://doi.org/10.1016/0030-4018(95)00676-1 (Original work published 1996)