Molecular dynamics simulations of energy effects on atorn F interaction with SiC(100)

In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiF(x) and CF(x) groups (x < 4)) in the reaction layer reach a steady state. When incident energy is less than 6 eV, no etching is observed. With incident energy increasing, the etching yields of Si and C atoms increase. It is found that Si atoms are preferentially removed. For etching products, SiF(4) is dominant. And the main etching mechanism of Si atoms is chemical etching.